Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5396268 | Journal of Electron Spectroscopy and Related Phenomena | 2010 | 6 Pages |
Abstract
Very recently, new LEED, STM and ARPES measurements on the (1/3)ML K/Si(1Â 1Â 1):B interface have shed the light on the role of phonons and force to reconsider the nature of the ground state, formerly proposed to be a Mott insulator. In this paper, we present simulations of the one-electron spectral function A(E). These are based on the atomic Holstein-Hubbard model, which is relevant in the strong electron-phonon coupling limit. The exact spectral function has been analysed carefully with special attention on the gap behaviour as a function of the on-site repulsion. We show that the spectral funcion is the same for opposite values of the effective on-site repulsion. The observed reconstruction favours the negative-Ueff case, which corresponds to a bipolaronic charge-ordered ground state. Finally, the ARPES lineshape is reproduced correctly with fitting parameters in agreement with the literature.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
C. Tournier-Colletta, L. Cardenas, Y. Fagot-Revurat, B. Kierren, D. Malterre,