| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5396331 | Journal of Electron Spectroscopy and Related Phenomena | 2010 | 5 Pages |
Abstract
Analysis of interfaces between (1 0 0)Si crystal and 5-nm thin HfO2 overlayers was conducted and the results obtained by a X-ray photoelectron spectroscopy (XPS) in combination with Ar+ ion sputtering were compared to the results obtained by a non-destructive X-ray emission spectroscopy with depth resolution (DRSXES). It was found that the atomic layer deposition of hafnia results in a thinner Si oxide interlayer than the metallo-organic chemical vapour deposition. By DRSXES thickness of this interlayer was found to be 1.5 ± 0.1 nm.
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Authors
E.O. Filatova, A.A. Sokolov, A.A. Ovchinnikov, S.Yu. Tveryanovich, E.P. Savinov, D.E. Marchenko, V.V. Afanas'ev, A.S. Shulakov,