Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5396725 | Journal of Electron Spectroscopy and Related Phenomena | 2009 | 6 Pages |
Abstract
A variety of photoelectron spectra for gas phase F3SiC2H4Si(CH3)3 molecule have been measured using monochromatized undulator radiation and a hemispherical electrostatic analyzer. Valence photoelectron spectrum shows many peaks for ionization from shallow and deep molecular orbitals in the binding energy region of 9-40Â eV. A calculation of ionization energies using the outer valence Green's function method indicates energies in agreement with experimental results below 17.5Â eV. Spectra for Si L-shell electron emission show chemical shifts of Si atoms induced from different chemical environments around two Si atoms and also exhibit spin-orbit splitting for 2p photoelectrons. Further photoelectron spectra for C K-shell and F K-shell are discussed in comparison with those of related molecules.
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Authors
I.H. Suzuki, A. Nitta, A. Shimizu, Y. Tamenori, H. Fukuzawa, K. Ueda, S. Nagaoka,