| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5397206 | Journal of Electron Spectroscopy and Related Phenomena | 2007 | 7 Pages |
Abstract
We present the results of measurements of changes occurring in chalcogenide thin films of Ge30Se70 and Ga40Se60 alloys induced by photo-absorption of visible and VUV light. Emphasis is given to the description of the experimental techniques, as well as the apparatus constructed for the measurements. The Ge30Se70 and Ga40Se60 alloys, were prepared by mechanical alloying in a ball mill, deposited as a thin film on a glass substrate and exposed to synchrotron photons in the visible and ultraviolet. The dependence of the transmission of a diode laser beam was determined as a function of the radiation exposure time used.
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Authors
P.R. de Moura, D.P. Almeida, J.C. de Lima,