| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5397527 | Journal of Luminescence | 2017 | 6 Pages |
Abstract
The a-Si1âxCx:H films have been deposited at low temperature (150 °C), while thermal treatments at high temperatures were not necessary as is done for SRO in order to improve its PL intensity. The above makes a-Si1âxCx:H an alternative material for low temperature optoelectronic silicon based devices and also for flexible device applications.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
I. Vivaldo, M. Moreno, A. Torres, R. Ambrosio, P. Rosales, N. Carlos, W. Calleja, K. Monfil, A. BenÃtez,