| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5397851 | Journal of Luminescence | 2017 | 6 Pages |
Abstract
Light-emitting diodes based on p-SnO2/i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589Â nm and 722Â nm in the visible region and a weak ultraviolet emission are observed from p-SnO2/i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yanqin Yang, Songzhan Li, Feng Liu, Nangang Zhang, Kan Liu, Shengxiang Wang, Guojia Fang,