| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5397854 | Journal of Luminescence | 2017 | 4 Pages |
Abstract
Near infrared light-emitting diode (LED) based on p-NiO/n-InN/n-GaN was realized by plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (rf) magnetron sputtering. The device exhibited diode-like rectifying current-voltage characteristics with a turn-on voltage of 1.0Â V. Under forward bias, prominent near infrared (NIR) emissions were observed at peak around 1570Â nm at room temperature. The NIR emission was ascribed to the band-edge emission of InN epilayer based on the photoluminescence spectrum and band diagram of the heterojunction. Moreover, the study of the LED in terms of the stability was also discussed.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yang Zhao, Hui Wang, Xiaoyang Gong, Qiuze Li, Guoguang Wu, Wancheng Li, Xinzhong Li, Guotong Du,