| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5397937 | Journal of Luminescence | 2017 | 6 Pages |
Abstract
We fabricated a p-NiMgO:Li/MgO/n-ZnO NWs/ITO heterojunction device and studied its electroluminescence characteristics. Emission from n-ZnO was observed under forward biases. Significantly the random lasing was achieved. Besides, to investigate the characteristics of NiMgO:Li material, we carried out a comparative study on NiMgO:Li and NiO:Li. The p-NiMgO:Li thin films were deposited on c-sapphire substrates by radio-frequency magnetron sputtering using high-purity NiO and MgO ceramic targets. Although, the hole concentration of NiMgO:Li thin film was low compared with the NiO:Li thin film, the electronic mobility and the optical transmittance have obviously improvements.
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Authors
Xianwei Chu, Shiwei Zhuang, Chen Chi, Heng Xu, Guotong Du, Xin Dong, Jingzhi Yin,