| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5397960 | Journal of Luminescence | 2017 | 4 Pages |
Abstract
We have investigated polarization resolved photoluminescence (PL) of GaAs1âxBix/GaAs quantum wells (QWs) with different Bi concentrations in the dilute range (x<2%) using linearly polarized laser excitation under high magnetic fields up to 15Â T at low temperatures (T<14Â K). It was found that the spin polarization and excitonic g-factor of GaAs1âxBix/GaAs QWs increase with the increase of Bi concentration. Excitonic gex-factors of 4 and 10 were obtained at 15Â T for as-grown GaAs1âxBix/GaAs QWs with 1.2% and 1.9% Bi concentration, respectively. These values evidence an important increase of electron and hole g-factors with the introduction of Bi in GaAs.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
M.A.G. Balanta, V. Orsi Gordo, A.R.H. Carvalho, J. Puustinen, H.M. Alghamdi, M. Henini, H.V.A. Galeti, M. Guina, Y. Galvão Gobato,