The effects of indium aggregation in InGaN/GaN single and multiple quantum wells grown on nitrogen-polar GaN templates by a pulsed metalorganic chemical vapor deposition

In this study, the effects of indium aggregation in InGaN/GaN single and multiple quantum wells (MQW) grown on nitrogen-polar GaN templates by a pulsed metalorganic chemical vapor deposition are investigated. With the pulsed growth mode, InGaN decomposition and indium aggregation lead to InGaN mounds, which forms localized states for trapping carriers. In the MQW sample, a higher density and larger size of InGaN mounds imply that an enhanced indium aggregation can improve luminescence efficiency.