Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5398153 | Journal of Luminescence | 2016 | 13 Pages |
Abstract
Blue multiple quantum well light-emitting diodes comprising of p-ZnO/(Cd0.12Zn0.88O/ZnO) multiple quantum wells/n-ZnO were grown on n-Si substrates using dual ion-beam sputtering deposition technique. X-ray diffraction of individual thin films revealed growth preferentially in c-axis direction perpendicular to the substrate. Photoluminescence studies indicated blue emission ~ 440Â nm from CdZnO and UV emission ~384Â nm arising from ZnO thin films. The LED showed a rectifying current-voltage behavior with a turn-on voltage of ~4.69Â V at room temperature. It emanated a room-temperature electroluminescence peak centered at 442Â nm, along with shoulder peak at 380Â nm in ultra-violet region associated with the recombination in ZnO layers of structure. It was found that with the increase in injection current the blue EL intensity increased and UV emission decreased, leading to improvement in successful radiative recombination in quantum wells. The results indicate prospects of fabrication of ZnO-based blue multiple quantum well LEDs.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Vishnu Awasthi, Sushil Kumar Pandey, Shruti Verma, Shaibal Mukherjee,