| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5398190 | Journal of Luminescence | 2016 | 4 Pages |
Abstract
Amorphous hydrogenated silicon-nitride (a-SiNx:H) quantum-dot (QD) films were successfully deposited on Si substrates using a specially designed system of plasma enhanced chemical vapor deposition. The a-SiNx:H QD films exhibit strong visible photoluminescence (PL) with a tunable peak energy ranging from 3.26 to 2.52Â eV, depending on the deposition pressure. The PL process was studied in terms of temperature-dependent and time-resolved PL spectra in comparison with the theoretical predication of the band-tail luminescence, and then the tunable PL spectra were assigned to the recombination of excitons in the localized states at the band tails of the a-SiNx:H QDs.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
D.Q. Shi, B.C. Hu, W. Xu, X.N. Li, C.Y. Ma, Q.Y. Zhang,