| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5398495 | Journal of Luminescence | 2016 | 4 Pages |
Abstract
We fabricated the light-emitting diodes (LEDs) consisting of n-InN/p-NiO/p-Si heterostructure by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (RF) magnetron sputtering. The device exhibited diode-like rectifying current-voltage characteristics and had a turn-on voltage of 2.0Â V. Under forward bias, a prominent narrow near infrared (NIR) emission peaked around 1565Â nm was observed at room temperature. The NIR emission was demonstrated to come from the band-edge emission of InN layer. Moreover, the study of the LED in terms of the stability and efficiency were also discussed in detail.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yang Zhao, Hui Wang, Guoguang Wu, Qiang Jing, Hang Yang, Fubin Gao, Wancheng Li, Baolin Zhang, Guotong Du,