Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5398616 | Journal of Luminescence | 2016 | 5 Pages |
Abstract
Photoluminescence (PL) and thermally stimulated current (TSC) spectra of Tl4Ga3InSe6S2 layered crystals grown by Bridgman method have been studied in the wavelength region of 560-690Â nm and the temperature range of 15-45Â K (PL) and in the temperature region of 10-90Â K (TSC). A broad PL band centered at 620Â nm (2.00Â eV) was observed at T=15Â K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.7-36.5Â mWÂ cmâ2 range. Radiative transitions from donor level located at 150Â meV below the bottom of conduction band to shallow acceptor level located at 10Â meV above the top of the valence band were suggested to be responsible for the observed PL band. TSC curve of Tl4Ga3InSe6S2 crystal exhibited one broad peak at about 41Â K. The activation energy of trap level was found to be 11Â meV. An energy level diagram showing transitions in the band gap of the crystal was plotted taking into account the results of PL and TSC measurements carried out below room temperature.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
N.M. Gasanly,