Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5399324 | Journal of Luminescence | 2015 | 7 Pages |
Abstract
N-Al codoped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. The films were deposited at different substrate temperatures ranging from 100 °C to 400 °C. The ZnO (002) peak showed the highest intensity at the substrate temperature of 400 ° C. The prepared films showed good transmission of above 72% in the visible range and the calculated values of energy band gaps were in the range (3.42±0.1-3.54±0.1 eV). Raman Peaks at 273.58 cmâ1 and 579.49 cmâ1 corresponding to ZnO:N and ZnO:AlN respectively were also observed. The Hall measurements showed that the films deposited at RT and 400 °C exhibit p-type conduction with hole concentrations of 1.52Ã10+19 cmâ3 and 6.3Ã10+17 cmâ3 respectively. The corresponding mobilities were 0.866 cm2 Vâ1 sâ1 and 10.5 cm2 Vâ1 sâ1 respectively.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A. Ismail, M.J. Abdullah, M.A. Qaeed,