Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5399705 | Journal of Luminescence | 2014 | 5 Pages |
Abstract
The optical properties and morphological features of ZnS nanowires fabricated by a thermal evaporation process have been systematically studied. We have observed both ZnS nanowires and ZnO structures in one fabrication batch. One common green emission peak in the photoluminescence spectra centered at 516-520Â nm appears and is independent of the don pants of the source materials and the catalytic metals. This peak is attributed to the contribution of ZnO structures by means of X-ray diffraction and Raman spectroscopic analysis. The exponential degradation of the photoluminescence intensity of ZnS and ZnO in air under UV laser irradiation not only indicates the significant role of oxygen diffusing into ZnO structures but also provides additional confirmation regarding the degradation that occurs inside ZnS nanowires. The emission model related to defects and ligand fields that occurs in both ZnS and ZnO as a result of this fabrication approach is discussed.
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Authors
D.Q. Trung, N.T. Tuan, H.V. Chung, P.H. Duong, P.T. Huy,