Long-term transformation of GaN/Al2O3 defect subsystem induced by weak magnetic fields

Long-term transformation of the optical transmittance and integral photoluminescence (PL) of GaN epitaxial structure under weak magnetic fields treatment (B=60 mT, τ=1.2 ms, t=5 min) were obtained. Optical and PL measurements were performed at 300 K in the wavelength ranges of 350-1100 nm and 350-650 nm, respectively. Non-monotonic changes of luminescence intensity accompanied by changes in optical thickness of layer that formed optical signal were observed. The correlations in extremes of obtained term-dependents were found. A method to estimate the diffusion factors of migrating defects in multilayer objects was proposed.