Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5399740 | Journal of Luminescence | 2014 | 7 Pages |
Abstract
We report the influence of Si spacer thickness variation (10-40Â nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1Â 0Â 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ~12-25Â nm, ~2-6Â nm, ~1.95-1.05Â nm and ~0.55Ã1011-2.1Ã1011Â cmâ2, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1Â 1Â 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson-Hall plot) due to bi-layering. The room temperature luminescence displays strong blue-violet peak associated with a blue shift as much as 0.05Â eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge-Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics.
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Physical and Theoretical Chemistry
Authors
Alireza Samavati, Z. Othaman, S.K. Ghoshal, M.R. Dousti,