| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5399812 | Journal of Luminescence | 2014 | 14 Pages |
Abstract
The red and white Bi4Ge3O12 (BGO) crystals had been grown by Vertical Bridgman (VB) method. The absorption and photoluminescence (PL) spectra of these BGO samples were measured. The red BGO shows a significant emission band peaking around 1490Â nm under 808Â nm laser diodes (LDs) excitation, and the white BGO exhibits a broadband emission under 940Â nm LDs excitation. X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopy were used to determine the structure of these BGO samples. The XAFS spectra indicated that the Bi environment in red and white BGO seem to be a little disordered compare with ordinary BGO.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Pingsheng Yu, Liangbi Su, Hengyu Zhao, Jun Xu,