| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5399958 | Journal of Luminescence | 2015 | 7 Pages |
Abstract
Luminescent properties of the ytterbium doped zinc selenide crystals with 0.00-8.00Â at % concentrations of the Yb impurity within the temperature interval from 6Â K to 300Â K were studied. Ytterbium doping was performed within three technological processes: during the growth by chemical vapor transport method and by thermal diffusion from the Bi+Yb or Zn+Yb melt. The influence of ytterbium impurity concentration on spectral position and intensity of the various photoluminescent bands in ZnSe emission spectra in visible and infrared range is analyzed. A tendency of ytterbium ions to form associates with background defects was demonstrated. A strong dependence between ytterbium influence on the zinc selenide emission spectra and concentration of selenium vacancies was shown.
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Authors
Ivan Radevici, Konstantin Sushkevich, Hannu Huhtinen, Dmitrii Nedeoglo, Petriina Paturi,