Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5400501 | Journal of Luminescence | 2013 | 4 Pages |
Abstract
We report short carrier lifetimes for GaAs/AlGaAs isolated single quantum wells (35, 50, and 90Â Ã
) grown via molecular beam epitaxy at 630 °C. Photoluminescence (PL) measured at 14-150 K show defect transitions that significantly thermalize at ~77 K. Carrier lifetimes of the quantum wells, measured via time-resolved PL (TRPL), are ~21 ps (35 Ã
), ~39Â ps (50Â Ã
) and ~48Â ps (90Â Ã
). Carrier lifetimes and fluence-dependence measurements suggest that at 77Â K where the shallow levels have thermalized, deeper level defects are still present and act as effective carrier traps. The defect density appears to vary inversely with well-width, and this observed behavior is explained on the basis of interface roughness.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jessica Afalla, Maria Herminia Balgos, Alipio Garcia, Jasher John Ibanes, Arnel Salvador, Armando Somintac,