Article ID Journal Published Year Pages File Type
5400675 Journal of Luminescence 2013 6 Pages PDF
Abstract
► We have fabricated LED structures using Tb atomic emissions on Si platform. ► Incorporation of excess Si into the active matrix significantly improved LED efficiency. ► Threshold voltage level for EL emission improved and taken below 10 V. ► Transport mechanism addressed as space charge limited during EL emission.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Improvement of light emission from Tb-doped Si-based MOS-LED using excess Si in the oxide layer
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