| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5400678 | Journal of Luminescence | 2013 | 4 Pages |
Abstract
⺠Phosphorus-implantation performed on ZnO films in order to achieve p-type doping ⺠Dominant acceptor-bound exciton peak for the samples, depict p-type conductivity ⺠Presence of free-electron-to-acceptor and donor-to acceptor peaks for the samples ⺠Acceptor activation energy of 125 meV is measured ⺠I-V characteristics exhibited diode-like behavior with a threshold voltage of 3.3 V.
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Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S. Nagar, S. Chakrabarti,