| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5400691 | Journal of Luminescence | 2013 | 5 Pages |
Abstract
⺠The growth of the ZnO nanorods was fabricated at very low temperature. ⺠High-quality heterojunctions were formed between the ZnO nanorod top tips and p-GaN. ⺠Defect-related electroluminescence emissions were absent. ⺠We discussed the electroluminescence origination and related carrier transport mechanism.
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Authors
Xiaoming Mo, Guojia Fang, Hao Long, Songzhan Li, Huihui Huang, Haoning Wang, Yihe Liu, Xianquan Meng, Yupeng Zhang, Chunxu Pan,