| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5400751 | Journal of Luminescence | 2013 | 4 Pages |
Abstract
⺠The n-ZnO/i-NiO/n-GaN isotype heterojunction diode was fabricated by MOCVD. ⺠NiO could be used as the effective electron blocking layer for n-ZnO/n-GaN heterojunction. ⺠The dielectric NiO layer could enhance the UV emission efficiency of the LED greatly.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Hui Wang, Zhifeng Shi, Baolin Zhang, Guoguang Wu, Jin Wang, Yang Zhao, Yan Ma, Guotong Du, Xin Dong,