| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5400927 | Journal of Luminescence | 2012 | 4 Pages |
Abstract
The dependence of Eu3+ photoluminescence (PL) properties on Eu concentration was studied in Eu-doped ZnO (ZnO:Eu) thin films grown by sputtering-assisted metalorganic chemical vapor deposition (SA-MOCVD). The ZnO:Eu showed band-edge PL from ZnO and red emission lines due to the intra-4f transitions in Eu3+ ions at room temperature (RT). The intensities of band-edge and Eu3+ PL decreased with the increasing Eu concentration. In the temperature dependence of Eu3+ PL, the ZnO:Eu with high Eu concentration showed large thermal quenching of the PL intensity. In addition, the lifetimes of Eu3+ PL became short at high Eu concentration. The concentration quenching mechanism of Eu3+ PL using a model based on non-radiative recombination processes in ZnO and Eu3+ ions was presented.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Takahiro Tsuji, Yoshikazu Terai, Muhammad Hakim Bin Kamarudin, Kazuki Yoshida, Yasufumi Fujiwara,