| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5400944 | Journal of Luminescence | 2013 | 6 Pages |
Abstract
⺠Growth of ZnO nanowires by thermal annealing of Zn films is demonstrated. ⺠Diameter of wires varies between 15 and 100 nm. ⺠Zn residue in the nanowires is controlled by annealing temperature. ⺠Photoluminescence (PL) and PL Excitation are dependent on fraction of Zn.
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Authors
Sachin D. Kshirsagar, Ummar Pasha Shaik, M. Ghanashyam Krishna, Surya P. Tewari,