| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5400980 | Journal of Luminescence | 2013 | 5 Pages |
Abstract
⺠Nitrogen doped ZnO nanowires were grown by MOCVD. ⺠Nanowire morphologies were characterised by scanning electron microscopy. ⺠Low temperature photoluminescence display DAP band due to p-type impurity in ZnO. ⺠Intensity evolutions of Raman peaks were correlated to the nitrogen concentration. ⺠Nitrogen incorporation in ZnO nanowires shows a saturation character.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
A. Souissi, N. Haneche, A. Meftah, C. Sartel, C. Vilar, A. Lusson, P. Galtier, V. Sallet, M. Oueslati,