Article ID Journal Published Year Pages File Type
5401004 Journal of Luminescence 2013 4 Pages PDF
Abstract
► We studied photoluminescence of Er in SiO2 thin films doped with Si nanoclusters. ► Presence of ITO layer on the top enhances photoluminescence decay rate of Er. ► The effect depends on the thickness of active film. ► Radiative rate change in proximity of ITO layer was calculated theoretically. ► The calculation results are compared with the experiment and discussed.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters
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