| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401140 | Journal of Luminescence | 2013 | 6 Pages |
Abstract
⺠In this work the optical characterization of InGaAsSb highly doped with zinc by grown LPE.is reported ⺠It analyses the LT-PL of p-type InGaAsSb layersis analzysed as a function of incorporated zinc concentration. ⺠The PL was interpreted using a model that takes into account nonparabolicity of the valence band. ⺠The band-to-band transition energy can be used to estimate the hole concentration in InGaAsSb.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Joel DÃaz-Reyes, Patricia RodrÃguez-Fragoso, Julio Gregorio Mendoza-Álvarez,