| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401159 | Journal of Luminescence | 2013 | 4 Pages |
Abstract
⺠The n-ZnO/p-NiO heterojunction was prepared by rf magnetron sputtering. ⺠The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of â¼3.6 V. ⺠The heterojunction realizes UV EL emission with wavelength of 387 nm at the injection current of 3.5 mA.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
R. Deng, B. Yao, Y.F. Li, Y. Xu, J.C. Li, B.H. Li, Z.Z. Zhang, L.G. Zhang, H.F. Zhao, D.Z. Shen,