| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401164 | Journal of Luminescence | 2013 | 6 Pages |
Abstract
⺠ZnO nanoflakes cap layer was synthesized on GaN film via a thermal oxidation process. ⺠PL results show the UV emission of GaN largely enhanced with ZnO NFs cap layer. ⺠Low oxidation temperature obtained high density of NFs and high UV emission peak. ⺠The super UV photodetector was obtained with low temperature cap layer at 470 °C. ⺠The increase in oxidation temperature of the ZnO limited the increase of UV emission of GaN.
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Authors
K.M.A. Saron, M.R. Hashim, Kamal Mahir Suleiman, K. Al-Heuseen,