| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401227 | Journal of Luminescence | 2011 | 6 Pages |
Abstract
⺠(A0, X) and DAP transitions at 3.35 and 3.26 eV related to arsenic acceptor. ⺠Oxygen annealing ambient promotes arsenic acceptor into ZnO films. ⺠Increase in structural defect lines is related to arsenic incorporation. ⺠Annealing at optimal temperature of around 550 °C is necessary for arsenic incorporation.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J.K. Dangbégnon, K. Talla, J.R. Botha,