Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5401344 | Journal of Luminescence | 2012 | 4 Pages |
Abstract
⺠UV electroluminescence of n-ZnO:Al/i-layer/n-GaN heterojunctions has been obtained. ⺠Under positive voltage, a dominant UV emission peak around â¼370 nm is observed for both heterojunctions. ⺠The UV emission peak intensity of the heterojunction with i-MgO layer is much stronger than that with i-ZnO layer at the same voltage. ⺠The threshold voltage of n-ZnO:Al/i-MgO/n-GaN heterostructured device is as low as 2.3 V.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Songzhan Li, Guojia Fang, Hao Long, Haoning Wang, Huihui Huang, Xiaoming Mo, Xingzhong Zhao,