| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401363 | Journal of Luminescence | 2012 | 5 Pages |
Abstract
⺠InAs/GaAs quantum dots grown by indium (In) interruption growth technique have been studied. ⺠InAs QDs grown by In-interruption showed an improvement in the size distribution and shape of QDs. ⺠Size/shape and density of InAs QDs can be controlled by changing the In-interruption time. ⺠In-interruption technique can be used to grow coherent QDs with uniform size distribution.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Hee Yeon Kim, Mee-Yi Ryu, Jin Soo Kim,