| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401456 | Journal of Luminescence | 2011 | 4 Pages |
Abstract
⺠MgZnO is firstly used as the current-blocking layer in ZnO/Si structures. ⺠Inserting MgZnO layer could improve the quality of the upper ZnO layer. ⺠Under forward bias, prominent UV emission around 388 nm is observed. ⺠We obtain a higher output power than n-ZnO/p-Si structure by almost 31%.
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Authors
Zhifeng Shi, Long Zhao, Xiaochuan Xia, Wang Zhao, Hui Wang, Jin Wang, Xin Dong, Baolin Zhang, Guotong Du,