| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401547 | Journal of Luminescence | 2012 | 7 Pages |
Abstract
⺠Magnetic field induced exciton binding energy is investigated in a strained InAs/GaAs quantum wire. ⺠The strain contribution to the potential is determined through deformation potentials. ⺠The interband emission energy of strained InAs/GaAs wire is investigated with the various structural parameters. ⺠Magnetic field induced photoionization cross section of the exciton is studied. ⺠The optical properties strongly depend on the incident optical intensity and the magnetic field.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
N. Arunachalam, A. John Peter, Chang Kyoo Yoo,