Article ID Journal Published Year Pages File Type
5401592 Journal of Luminescence 2012 5 Pages PDF
Abstract
► Band structure of GaAs/AlxGa1−xAs superlattice under an ILF is investigated. ► Dramatic variation of the confinement potential in the well/barrier region is predicted. ► ILF creates an additional geometric confinement on the electronic states. ► Significant changes come in the electronic energy levels and density of states.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Authors
, , , , , , ,