Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5401592 | Journal of Luminescence | 2012 | 5 Pages |
Abstract
⺠Band structure of GaAs/AlxGa1âxAs superlattice under an ILF is investigated. ⺠Dramatic variation of the confinement potential in the well/barrier region is predicted. ⺠ILF creates an additional geometric confinement on the electronic states. ⺠Significant changes come in the electronic energy levels and density of states.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S. Sakiroglu, U. Yesilgul, F. Ungan, C.A. Duque, E. Kasapoglu, H. Sari, I. Sokmen,