| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401627 | Journal of Luminescence | 2012 | 4 Pages |
Abstract
⺠Er-related photoluminescence is obtained in Er-doped AlN thin films prepared at room temperature par RF sputtering. ⺠Er3+ ions can be directly or indirectly excited. ⺠The temperature quenching is weak. ⺠The magnetron power has a strong influence on the PL properties.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
H. Rinnert, S.S. Hussain, V. Brien, J. Legrand, P. Pigeat,