| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401668 | Journal of Luminescence | 2011 | 6 Pages |
Abstract
âºHigh quality GaN epitaxial layer was grown on β-Si3N4/Si (1 1 1) by plasma-assisted MBE. âºThe temperature-dependent PL spectra showed an 'S-like' shape of free exciton emission peaks. âºThe activation energy of the free exciton was also evaluated to be â¼27.8±0.7 meV. âºThe silicon nitride layer effectively prevents Si diffusion from the substrate to GaN epilayers. âºThe tensile stress in GaN film calculated by the thermal stress model.
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Authors
Mahesh Kumar, Mohana K. Rajpalke, Basanta Roul, Thirumaleshwara N. Bhat, P. Misra, L.M. Kukreja, Neeraj Sinha, A.T. Kalghatgi, S.B. Krupanidhi,