Role of impurity influenced domain on excitation profile of doped quantum dot subject to oscillatory confinement potential

► The excitation profile of quantum dot subjects to periodically fluctuating confinement potential has been investigated. ► The quantum dot is doped with a repulsive Gaussian Impurity. ► The impurity domain and impurity location delicately modulate the excitation profile. ► The excitation becomes maximum for typical values of dopant strength depending upon the dopant location and dopant domain. ► The magnitude of this typical value undergoes immense enhancement on quenching the spatial extension of dopant. Such quenching beyond a critical value completely offsets any kind of excitation.