Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5401716 | Journal of Luminescence | 2012 | 4 Pages |
Abstract
⺠Reported effect of growth conditions on optical properties of InAs QD. ⺠Detailed PL energy behavior under different growth rates and As ratio fluxes. ⺠Explained the origin of carrier localization.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
F. Saidi, L. Bouzaïene, L. Sfaxi, H. Maaref,