| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401726 | Journal of Luminescence | 2012 | 5 Pages |
Abstract
⺠A unique method is presented to determine the exciton binding energy in a polycrystalline CsSnI3 compound. ⺠A large exciton binding energy of 18 meV was deduced for the natural two-dimensional excitons in CsSnI3. ⺠CsSnI3 is important semiconductor since it has a direct band gap of 1.32 eV at 300 K. ⺠Exciton lifetime increases monotonically with temperature up to near room temperature.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Zhuo Chen, Chonglong Yu, Kai Shum, Jian J. Wang, William Pfenninger, Nemanja Vockic, John Midgley, John T. Kenney,