| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401741 | Journal of Luminescence | 2012 | 5 Pages |
Abstract
⺠We examine the effect of junction temperature on the optoelectrical properties. ⺠Not only the band-filling effect but also the quantum confinement effect. ⺠Piezoelectric polarization and the spontaneous polarization in InGaN/GaN structures. ⺠Carrier transport was responsible for the influences on the optoelectrical characteristics.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Jen-Cheng Wang, Chia-Hui Fang, Ya-Fen Wu, Wei-Jen Chen, Da-Chuan Kuo, Ping-Lin Fan, Joe-Air Jiang, Tzer-En Nee,