| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401745 | Journal of Luminescence | 2012 | 8 Pages |
Abstract
⺠GaAs n-type delta-doped field effect transistor. ⺠NOR and SHG are enhanced as a result of the pressure. ⺠THG is quenched as a result of the pressure. ⺠The zero pressure situation is the best scenario for the THG.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
J.C. MartÃnez-Orozco, M.E. Mora-Ramos, C.A. Duque,