| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401816 | Journal of Luminescence | 2012 | 6 Pages |
Abstract
⺠Phosphorus-irradiation performed on ZnO films to try to achieve p-type doping. ⺠Dominant donor-bound exciton peak for the samples, depict n-type conductivity. ⺠Increase of free-electron-to-acceptor and donor-to acceptor peaks for the samples. ⺠Annealing the irradiated samples resulted in reduced defect-related luminescence. ⺠Acceptor activation energy of 121 meV is measured.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S. Nagar, S.K. Gupta, S. Chakrabarti,