Article ID Journal Published Year Pages File Type
5401848 Journal of Luminescence 2012 4 Pages PDF
Abstract
► Photoluminescence of InAs QDs embedded in InxGa1−xAs/GaAs QWs with x in the range from 0.10 to 0.25 is studied. ► Non-monotonous variation of InAs QD PL intensity and peak position versus x is detected. ► XRD peaks related to (4 0 0) plane in GaAs QWs shift versus x non-monotonously. ► Elastic strain changes in QWs with x due to the different lattice mismatches at QD and QW interfaces.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Emission and elastic strain in InAs dot-in-a well InGaAs/GaAs structures
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