Article ID Journal Published Year Pages File Type
5401926 Journal of Luminescence 2011 5 Pages PDF
Abstract
► Si nanoclusters embedded in Si nitride films by ion implantation. ► PL behavior investigated by changing implantation and annealing parameters. ► After annealing at 475 °C two superimposed PL bands were observed. ► Structural evolution of the a-Si nanoclusters were characterized by TEM analysis.
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Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Structural and photoluminescence properties of Si nanoclusters obtained by ion implantation into Si3N4 films
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