| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5401975 | Journal of Luminescence | 2011 | 4 Pages |
Abstract
⺠SiNx-based luminescent materials (or luminescent SiNx-nanostructures) are formed by the conventional PECVD. ⺠Radiative recombination between N4+ and N2° defects results in strong PL at 710 nm. ⺠Radiative N4+ and N2° defects were localized in the optically active intermediate states (OAIS's), which are mainly composed of the lower Si coordination sates. ⺠OAIS is thermally meta-stable and chemically intermediate state. ⺠Thermal annealing leads to the increase in regions of the OAIS.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Changhun Ko, Moonsup Han, Hyun-Joon Shin,