| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5402071 | Journal of Luminescence | 2011 | 4 Pages |
Abstract
⺠ZnO/SiO2 thin films on Si substrates were fabricated by E-beam evaporation. ⺠The SiO2 buffer layer is amorphous. ⺠PL spectroscopy showed that UV luminescence at only 374 nm is observed for all samples. ⺠The optical quality of the ZnO film has been improved by thermal retardation and by using an amorphous SiO2 buffer layer.
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Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Linxing Shi, Xiangyin Li,